http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST7815-C -1.7a, -150v, r ds(o#) 780m% p-channel enhancement mode mosfet 24-nov-2017 rev. a page 1 of 4 b l f h c j d g k a e 7815 = date code rohs compliant product a suffix of -c specifies halogen and lead-free features -150v/ -1.7a r ds(on) Q 780m. @v gs = -10v r ds(on) Q 810m. @v gs = -6v reliable and rugged green device available application power management in notebook computer portable equipment and battery powered systems marking package information package mpq leader size sot-26 3k 7 inch order information absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds -150 v gate-source voltage v gs 20 v t c =25c -1.7 t c =70c -1.4 t a =25c -1.3 continuous drain current, @v gs = -10v 1 t a =70c i d -1 a pulsed drain current 3 i dm -6.8 a t c =25c 3.2 total power dissipation t a =25c p d 2 w operating junction and storage temperature range t j , t stg -55~150 c thermal data t Q 5sec, 62.5 thermal resistance junction-ambient 1 steady state, 125 thermal resistance junction-ambient 2 r ja 156 thermal resistance junction-case 1 r jc 39 c/w part number type SST7815-C lead (pb)-free and halogen-free sot-26 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.30 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.25 0.50
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST7815-C -1.7a, -150v, r ds(o#) 780m% p-channel enhancement mode mosfet 24-nov-2017 rev. a page 2 of 4 electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss -150 - - v v gs =0, i d = -250a gate threshold voltage v gs(th) -2 - -4 v v ds =v gs , i d = -250a forward transconductance g fs - 2.9 - s v ds = -10v, i d = -1.4a gate-source leakage current i gss - - 100 na v gs = 20v t j =25c - - -1 drain-source leakage current t j =55c i dss - - -10 a v ds = -120v, v gs =0 - - 780 v gs = -10v, i d = -1.4a static drain-source on-resistance 4 r ds(on) - - 810 m. v gs = -6v, i d = -1a total gate charge q g - 11 - gate-source charge q gs - 2.5 - gate-drain change q gd - 2.4 - nc i d = -1a v ds = -75v v gs = -10v turn-on delay time t d(on) - 9 - rise time t r - 6 - turn-off delay time t d(off) - 23 - fall time t f - 8 - ns v ds = -75v i d = -1a v gs = -10v r g =1. input capacitance c iss - 571 - output capacitance c oss - 29 - reverse transfer capacitance c rss - 17 - pf v gs =0 v ds = -30v f=1mhz source-drain diode forward on voltage 4 v sd - - -1.2 v i s = -1a, v gs =0 continuous source current 1 i s - - -1.7 pulsed source current 3 i sm - - -6.8 a reverse recovery time t rr - 60 - ns reverse recovery charge q rr - 120 - nc i f = -1a, di/dt=100a/s t j =25c notes: 1. surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2. when mounted on min. copper pad. 3. pulse width limited by maximum junction temperat ure. 4. the data tested by pulsed, pulse width Q 300us, duty cycle Q 2%.
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST7815-C -1.7a, -150v, r ds(o#) 780m% p-channel enhancement mode mosfet 24-nov-2017 rev. a page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST7815-C -1.7a, -150v, r ds(o#) 780m% p-channel enhancement mode mosfet 24-nov-2017 rev. a page 4 of 4 characteristic curves
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